TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit

A dual-gate organic field effect transistor (DG-OFET)-based pH sensor is proposed that will be able to detect the variations in aqueous (electrolyte) medium. In this structure, a source-sided underlap technique with sensing approach has been used. The change ON-current (ION) was observed due parallel examination of electrolytes two gates underlapping region structure. For evaluation sensitivity DG-OFET, drain current exploited for different and corresponding charge densities utilizing 2D physics-based numerical simulation. simulation results were extracted help software package Silvaco TCAD-ATLAS. simulated display DG-OFET shows significantly higher high-k dielectrics. voltage achieved by SiO2 as dielectric our work 217.53 mV/pH which surpasses Nernst Limit nearly four times. However, using (Ta2O5) increases it further 555.284 more than nine times Limit. lot potential future various flexible applications its flexibility, being highly sensitive, biocompatible low-cost.